CY62187EV30LL-55BAXIT

CY62187EV30LL-55BAXIT is a high-speed CMOS static RAM (SRAM) produced by Cypress Semiconductor (now Infineon Technologies). It features a capacity of 2 Mbit, an access time of 55 ns, and operates at a voltage range of 3.0V to 3.6V.

Key Parameters:

  • Capacity: 2 Mbit (256K x 8)
  • Operating Voltage: 3.0V – 3.6V
  • Access Time: 55 ns
  • Operating Temperature: -40°C to +85°C
  • Package: 48-ball BGA
  • Interface: Parallel
  • Power Consumption: Low-power design, suitable for battery-powered devices

Application Scenarios:

  1. Industrial Control:
    • Used in industrial control systems requiring high-speed data storage and retrieval.
    • Suitable for real-time data processing and storage.
  2. Communication Equipment:
    • Used for data caching in network devices, routers, and switches.
    • Supports high-speed data transmission and processing.
  3. Medical Devices:
    • Used in medical devices requiring reliable data storage, such as monitors and diagnostic equipment.
    • Low-power design is suitable for portable medical devices.
  4. Consumer Electronics:
    • Used in consumer electronics like digital cameras and gaming consoles that require high-speed data processing.
    • Provides fast data access, enhancing user experience.
  5. Automotive Electronics:
    • Used in automotive navigation systems, entertainment systems, and Advanced Driver Assistance Systems (ADAS).
    • Wide temperature range adapts to automotive environments.
  6. Embedded Systems:
    • Used in various embedded systems, such as smart home devices and Internet of Things (IoT) devices.
    • Low power consumption and high-speed access meet the needs of embedded systems.

Advantages:

  • High-Speed Access: 55 ns access time, suitable for high-speed data processing.
  • Low Power Consumption: Suitable for battery-powered devices.
  • Wide Temperature Range: Adapts to harsh environments.
  • High Reliability: Suitable for industrial and automotive applications.

Welcome to consult!

Similar Posts

Leave a Reply

Your email address will not be published. Required fields are marked *